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| INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2094 DESCRIPTION *Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) *Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 4A *High DC Current Gain : hFE= 1000(Min) @ IC= 4A, VCE= 3V APPLICATIONS *Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage IC ICM Collector Current-Continuous w ww scs .i VALUE 120 V 120 V 7 V 8 A 12 A 25 W 2 UNIT .cn mi e Collector Current-Peak Collector Power Dissipation @ TC=25 PC Collector Power Dissipation @ Ta=25 TJ Junction Temperature 150 Tstg Storage Temperature Range -55~150 isc Websitewww.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2094 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 100mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 4A; IB= 8mA B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 8A; IB= 80mA B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 4A; IB= 8mA B ICBO Collector Cutoff Current ICEO Collector Cutoff Current hFE DC Current Gain w w scs .i w VCB= 100V; IE= 0 VCE= 100V; RBE= IC= 4A; VCE= 3V .cn mi e 1000 2.0 V A 10 10 A 20000 isc Websitewww.iscsemi.cn 2 |
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